Piezocapacitance spectroscopy of a radiation defect in silicon
Numonjon SultanovDoctor of Physical and Mathematical Sciences, Professor, Department of Physics, Fergana Polytechnic Institute, 150100 Fergana, UzbekistanZokirjon MirzajonovCandidate of Physical and Mathematical Sciences, Docent, Department of Physics, Fergana Polytechnic Institute, 150100 Fergana, UzbekistanБ. Х. КаримовDoctor of Physical and Mathematical Sciences, Professor, Department of Physics, Fergana Polytechnic Institute, 150100 Fergana, Uzbekistan
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In this article, using non-stationary capacitive deep-level spectroscopy (DLTS), the dependence of the parameters of the radiation defect with the ionization energy E i = E c − (0.33±0.02) eB arising after irradiation with n − Si · λ - quanta of the 60 Co isotope and annealing the samples at 250°C on uniaxial compression was studied. It is shown that, under the action of pressure, E i Δ E i changes depending on the crystallographic direction and reaches values of 0.06−0.12 eB . A comparison is made with a similar effect for the level of the A-centre E c − 0,17 eB .
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