Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBasetez oradaEkotizim uchun ochiq API
Lotin
Maqola

Quasi-molecules of Sulphur in Silicon

Shoikrom I. AskarovTashkent State Technical University,Dept. of Theoretical Physics,Tashkent,UzbekistanBashirulla B. SharipovTashkent State Technical University,Dept. of Theoretical Physics,Tashkent,UzbekistanAbdulaziz Sh. MavlyanovSemiconductor Physics and Microelectronics Institute,Dept. Condensed Matter Physics,Tashkent,UzbekistanShohista K. SaliyevaTashkent State Technical University,Dept. of Theoretical Physics,Tashkent,UzbekistanД. М. ШукуроваTashkent State Technical University,Dept. of Theoretical Physics,Tashkent,UzbekistanD. T. RasulovaTashkent State Technical University,Dept. of Theoretical Physics,Tashkent,Uzbekistan
2023en
ABI

Annotatsiya

The paper is concerned with the study of behavior of impurity centers of sulfur in silicon as a function of vapor pressure (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf>) of sulfur during its diffusion doping. It was revealed that at low Ps, sulfur in silicon is in a state of individual substitution atoms. Following the vapor pressure (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf>) ≥0,5 •10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> Pa, the «quasi-molecules» consisting of two neighboring sulfur substitution centers - S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, start to assemble in the bulk of silicon, and at P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> ≥1•10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> Pa, we are witnessing the occurrence of «quasi-molecules» that presumably consist of four sulfur substitution centers - S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>. The concentration of both atomic centers and S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-type «quasi-molecules» tends to rise steadily as Ps increases. At the same time, the concentration of S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>-type «quasi-molecules» first has risen (before the pressure has reached P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf>=2•10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> Pa), and then fallen. It was revealed that in the presence of such S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>-type «quasi-molecules» the sensitivity characteristics of the sample to various external influences substantially increased.

Mavzular

Identifikatorlar

Iqtiboslar va manbalar

Koʻrsatkichlar — AkademScholar · Tez orada