Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon
Bakhrom IgаmоvScientific and Technical Center with a Design Bureau and Pilot Production of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanGunel ImanovaInstitute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, Baku, AzerbaijanA.I. KamardinScientific and Technical Center with a Design Bureau and Pilot Production of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanI. R. BekpulatovKarshi State University, Karshi, Uzbekistan
ABI
Annotatsiya
The results of complex experimental studies of the parameters of thin coatings of SiO2 oxides on Si, formed by thermal oxidation at temperatures of 1200 °C, including studies using electron and X-ray spectroscopy, IR-Fourier spectrometer IRTracer-100 - developed by Shimadzu, Raman scattering, and test electrophysical structures, are presented. Data have been obtained that for a silicon dioxide thickness of about 400 nm, the porosity of the coating does not exceed 2/cm2, and the electric field strength for the breakdown of the dioxide reaches 5·106 V/cm. The crystal structure of SiO2 is triclinic, lattice period a = 4.9160 Å, b = 4.9170 Å, c = 5.4070 Å, a = 90.000, b = 90.000, γ = 120.000, density 2.64 g/cm³.
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