Maqola

Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

I. R. BekpulatovKarshi State University, Qarshi, UzbekistanGunel ImanovaDepartment of Physics and Electronics, Khazar University, Baku, AzerbaijanБ. Е. УмирзаковKarshi State University, Qarshi, UzbekistanK.T. DovranovKarshi State University, Qarshi, UzbekistanVera LobodaPeter the Great St. Petersburg Polytechnic University, St Petersburg, RussiaS. H. JabarovIlkhom TurapovTashkent State Technical University, Tashkent, UzbekistanN.E. NorbutaevGulistan State University, Gulistan, Uzbekistan

Materials Research Innovationsjournal2024en

ABI

Annotatsiya

CrSi2 thin films with different thicknesses obtained on the Si(111) surface by magnetron sputtering method have been investigated using complex of electron spectroscopy and microscopy methods. The thin films' composition, surface morphology, and cross-section, as well as the resistivity's, Seebeck coefficient's, and power factor's temperature dependences have been studied for the first time. It has been established that, starting from a thickness of ~ 400 Å (deposition time ~ 60 sec), the SiO2/Si(111) surface is completely covered with an amorphous CrSi2 film. After heating the CrSi2/SiO2/Si(111) system at T ≈ 750 K, a homogeneous polycrystalline CrSi2/SiO2/Si(111) film is formed. It is shown that the resistivity ρ, the Seebeck coefficient S, and the power factor P of a CrSi2/SiO2/Si(111) film of different thicknesses (80 and 180 nm) change nonlinearly with increasing temperature. Their values for CrSi2 films of different thicknesses differ slightly from each other.

Hali tarjima qilinmagan

Mavzular

Advanced Thermoelectric Materials and Devices Chalcogenide Semiconductor Thin Films nanoparticles nucleation surface interactions

Identifikatorlar

DOI: 10.1080/14328917.2024.2339001

Iqtiboslar va manbalar

9 ta iqtibos 25 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada