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Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO2/Si Track Template

Alma DauletbekovaDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanDiana JunisbekovaDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanZein BaimukhanovDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanAivaras KareivaFaculty of Chemistry and Geosciences, University of Vilnius, Naugarduko Str. 24, LT-03225 Vilnius, LithuaniaAnatoli I. PopovInstitute of Physics, University of Tartu, W. Ostwald Str. 1, 50411 Tartu, EstoniaAlexander PlatonenkoInstitute of Solid-State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga, LatviaА. АkilbekovDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanAinash AbdrakhmetovaDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanGulnara AralbayevaDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanZhanymgul KoishybayevaDepartment of Technical Physics, L.N. Gumilyov Eurasian National University, Satpayev Str. 2, Astana 010008, KazakhstanJonibek KhamdamovInstitute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Yangi Almazar Str., 20, Tashkent 10005, Uzbekistan

Crystalsjournal2024en

ABI

Annotatsiya

In this study, chemical deposition was used to synthesize structures of Ga2O3 -NW/SiO2/Si (NW—nanowire) at 348 K and SnO2-NW/SiO2/Si at 323 K in track templates SiO2/Si (either n- or p-type). The resulting crystalline nanowires were δ-Ga2O3 and orthorhombic SnO2. Computer modeling of the delta phase of gallium oxide yielded a lattice parameter of a = 9.287 Å, which closely matched the experimental range of 9.83–10.03 Å. The bandgap is indirect with an Eg = 5.5 eV. The photoluminescence spectra of both nanostructures exhibited a complex band when excited by light with λ = 5.16 eV, dominated by luminescence from vacancy-type defects. The current–voltage characteristics of δ-Ga2O3 NW/SiO2/Si-p showed one-way conductivity. This structure could be advantageous in devices where a reverse current is undesirable. The p-n junction with a complex structure was formed. This junction consists of a polycrystalline nanowire base exhibiting n-type conductivity and a monocrystalline Si substrate with p-type conductivity. The I–V characteristics of SnO2-NW/SiO2/Si suggested near-metallic conductivity due to the presence of metallic tin.

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DOI: 10.3390/cryst14121087

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