Maqola

STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

Sharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

Advanced Physical Researchjournal2024en

ABI

Annotatsiya

In this work, the effect of high-temperature doping and proton irradiation on the depth profile and the creation of layers on the surface of single-crystal silicon was studied. The study used singlecrystal n-type silicon samples doped with phosphorus during growth. These samples were first doped with platinum and chromium and after polishing they were irradiated with protons with an energy of 2 MeV, a dose of 5.1 × 1014 cm–2 at the EG-5 accelerator. Studies of the optical properties of the sample surface were carried out using an ELLIPS-1991 spectroscopic ellipsometer at room temperature

Mavzular

Advanced Materials Characterization Techniques Electron and X-Ray Spectroscopy Techniques

Identifikatorlar

DOI: 10.62476/apr62.83

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