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Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

S. B. DonaevDepartment of Electronic Equipment Production Technology, Faculty of Electronics and Automation, Tashkent State Technical University Named after Islam Karimov, Tashkent 100095, UzbekistanGanjimurod ShirinovDepartment of Electronic Equipment Production Technology, Faculty of Electronics and Automation, Tashkent State Technical University Named after Islam Karimov, Tashkent 100095, UzbekistanБ. Е. УмирзаковDepartment of Electronic Equipment Production Technology, Faculty of Electronics and Automation, Tashkent State Technical University Named after Islam Karimov, Tashkent 100095, UzbekistanBurkhan DonayevKarshi Engineering-Economical Institute, Karshi 180100, UzbekistanShenghao WangMaterials Genome Institute, Shanghai University, Shanghai 200444, China

Coatingsjournal2024en

ABI

Annotatsiya

Using a complex of secondary and photoelectron spectroscopy methods, the effects of the implantation of In+ ions with an energy of E0 = 1 keV at different doses and subsequent annealing on the composition, electronic, and crystal structure of the GaP(111) surface were studied. It is shown that in the dose range D ≈ 5 × 1014–5 × 1015 cm−2 after annealing, nanocrystalline phases Ga0.6In0.4P are formed with surface dimensions d ≈ 10–30 nm, and at D ≥ 6 × 1016 cm−2 nanofilm–Ga0.6In0.4P with a thickness of 30–35 nm. It has been found that the band gap of nanophases (Eg ≈ 2–2.3 eV) is much larger than Eg of the film (~1.85 eV). For the first time, information was obtained on the density of state of electrons in the valence band of nanophases and nanofilm GaInP.

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Mavzular

Ion-surface interactions and analysis Semiconductor materials and interfaces Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.3390/coatings14101231

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