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Study of infrared quenching in silicide-silicon-silicide structures

A. T. MamadalimovNational University of Uzbekistan, Tashkent, UzbekistanMakhmudhodzha IsaevAlmalik branch of Tashkent State Technical University, Uzbekistan

Advanced Physical Researchjournal2024en

ABI

Annotatsiya

Infrared quenching (IR Q) in silicide-silicon-silicide and silicide-silicon-metal structures has been studied. Silicides are obtained through the process of diffusion doping of silicon with manganese atoms. Infrared quenching was detected in the irradiation energy range of 0.31-0.75 eV when illuminated with local light hv≥Eg. Attachment levels for electrons were found: Ec-0.31 eV, Ec-0.38 eV, Ec-0.51 eV. The long-wave limit of photoconductivity (PC) was established to be 0.38 eV by studying the spectral characteristics of silicide-silicon-silicide structures.

Mavzular

Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.62476/apr61.55

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