On the dynamic properties of non-equilibrium charge carriers in silica water
Khurmatillo IzzatillaevNamangan Engineering Technological Institute, Namangan, UzbekistanRayimjon AliyevAndijan State University, Andijan, UzbekistanMaxmudjon QaxxarovNamangan Engineering Technological Institute, Namangan, UzbekistanDilshodbek JurahanovNamangan Engineering Technological Institute, Namangan, UzbekistanMaksud ShamsiddinovNamangan Engineering Technological Institute, Namangan, Uzbekistan
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We studied n-type monocrystalline silicon wafers with resistivity of ∼83 Ohmꞏcm, dislocation density of ∼104 cm-2 and thickness of 0.0525 cm. Graphs of light intensity and photoconductivity as a function of time were obtained. They are calculated from the raw voltages of the RF sensor and the light sensor using calibration constants in advanced parameters. It was found that the light intensity to be measured by quasi-stationary photoconductivity methods should have a smooth, exponentially decreasing curve after an initial rapid increase.
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