Influence of electron irradiation on the microhardness of cobalt doped silicon
Mannab Yusupovich TashmetovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, 1 Khuroson str., 100214, Tashkent, UzbekistanShermaxmat MakhkamovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, 1 Khuroson str., 100214, Tashkent, UzbekistanM.N. ErdonovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, 1 Khuroson str., 100214, Tashkent, UzbekistanR.P. SaidovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, 1 Khuroson str., 100214, Tashkent, UzbekistanN. T. SulaymanovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, 1 Khuroson str., 100214, Tashkent, UzbekistanT.S. TillaevInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, 1 Khuroson str., 100214, Tashkent, UzbekistanKhamid KholmedovAl-Khwarizmi University of Information Technologies, 10 Amir Timur str., 100084, Tashkent, Uzbekistan
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The influence of the cobalt dopant concentration and electron irradiation on the microhardness of single-crystal silicon has been studied The appearance of impurity cobalt atoms in doped silicon was shown to cause the decrease in the microhardness of the initial crystal, while electron irradiation results in increasing in the microhardness values of both undoped and doped silicon. The scheme of quasi-chemical reactions is proposed for the formation of complexes with the participation of impurity and radiation defects responsible for the change in the microhardness of doped silicon.
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