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Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

Jamoliddin X. MurodovTashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan; Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, UzbekistanSh. U. YuldashevCenter of Nanotechnology Development, National University of Uzbekistan, Tashkent, UzbekistanAzamat O. ArslanovNational University of Uzbekistan named after Mirzo Ulugbek, Tashkent, UzbekistanNoiba U. BotirovaCenter of Nanotechnology Development, National University of Uzbekistan, Tashkent, UzbekistanJavohir Sh. XudoyqulovNational University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan; Central Asian University, Tashkent, UzbekistanRa’no Sh. SharipovaCenter of Nanotechnology Development, National University of Uzbekistan, Tashkent, UzbekistanР. А. НусретовTashkent State Technical University named after Islam Karimov, Tashkent, UzbekistanA. A. NebesniyNational University of Uzbekistan named after Mirzo Ulugbek, Tashkent, UzbekistanM. PirimmatovInstitute of Physics and Technology, Tashkent, Uzbekistan

East European Journal of Physicsjournal2025en

ABI

Annotatsiya

This study presents the fabrication and resistive switching (RS) performance of bilayer SnO2/ZnO thin films deposited via ultrasonic spray pyrolysis on p-type silicon substrates. The heterostructures were post-annealed at 450°C to enhance crystallinity and interfacial contact. Electrical characterization using I–V measurements revealed clear bipolar RS behavior without the need for an initial forming process. The devices exhibited a stable high resistance state (HRS) and low resistance state (LRS) across multiple cycles, with an ON/OFF ratio exceeding 10². The switching mechanism is attributed to the formation and rupture of conductive filaments likely induced by oxygen vacancies at the SnO₂/ZnO interface. Bandgap estimation using Tauc plots showed values of approximately 3.17 eV and 3.41 eV for ZnO and SnO2, respectively. These findings confirm the potential of SnO2/ZnO heterojunctions as efficient materials for next-generation non-volatile memory applications.

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Mavzular

Advanced Memory and Neural Computing Transition Metal Oxide Nanomaterials Ferroelectric and Negative Capacitance Devices

Identifikatorlar

DOI: 10.26565/2312-4334-2025-3-34

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