Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds
Annotatsiya
The possibility of fabricating a heterosystem based on А2В6 compounds with potential barriers (Au)CdS/Si/CdTe(Au) with a minimum density of surface states is presented, confirmed by measurements of the potential barrier height based on capacitance-voltage methods. Various exponential dependences of the current on the voltage at forward biases associated with a change in the kinetic parameters of the CdS/Si/CdTe structure base are determined, and it is revealed that at current densities of 2.1×10−7 ÷ 0.35×10−6 A/cm−2 in the studied CdS/Si/CdTe structure, the current is limited by recombination in the space charge layer. It is shown that when a reverse bias is applied to the structure, the structure base is completely covered by the space charge accompanied by electron injection from the rear contact, which in turn determines the mechanism of current transfer of the structure.