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Ish: Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.279528

2. Sarlavhasiz

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   ABIABI:AkademIndex/openalex/2026.other.762777

3. Sarlavhasiz

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   ABIABI:AkademIndex/openalex/2026.other.762778

4. Sarlavhasiz

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   ABIABI:AkademIndex/openalex/2026.other.762779