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Ish: On the Theory of the Intraband Mechanism of Single-Photon Absorption in Semiconductors, Taking into Account the Effect of Coherent Saturation
Band parameters for III–V compound semiconductors and their alloys
I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan
Maqola200121 iqtibosABISuperlinear Photogalvanic Effects in (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Bi</mml:mi><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Sb</mml:mi><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>2</mml:mn></mml:msub></mml:math>(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Te</mml:mi><mml:mrow><mml:mn>0.1</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mrow><mml:mn>0.9</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>3</mml:mn></mml:msub></mml:math>: Probing Three-Dimensional Topological Insulator Surface States at Room Temperature
S. N. Danilov, L. E. Golub, Thomas Mayer +8
Maqola20212 iqtibosABI