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22 ta ish

Ish: Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

  1. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Maqola199810 iqtibos
    ABI

  2. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

    D. V. Lang

    Maqola19749 iqtibos
    ABI

  3. Photoluminescence study of the surface modified and MEH-PPV coated cotton fibers

    A. S. Zakirov, Sh. U. Yuldashev, H.J. Wang +4

    MaqolaOrganic Electronics and PhotovoltaicsJournal of Luminescence20106 iqtibos
    ABI

  4. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    В. А. Козлов, Vitalii V. Kozlovski

    Maqola20016 iqtibos
    ABI

  5. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20245 iqtibos
    ABI

  6. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20243 iqtibos
    ABI

  7. Functional hybrid materials derived from natural cellulose

    A. S. Zakirov, Sh. U. Yuldashev, Hak Dong Cho +4

    MaqolaConducting polymers and applicationsJournal of the Korean Physical Society20123 iqtibos
    ABI

  8. Defect Structure of Silicon Doped with Erbium

    Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20243 iqtibos
    ABI

  9. Defective Structure of Silicon Doped with Dysprosium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Alisher Khaitbaev +3

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20243 iqtibos
    ABI

  10. Capacitance Transient Spectroscopy

    G. L. Miller, D. V. Lang, Lionel C. Kimerling

    Maqola19773 iqtibos
    ABI

  11. First-principles study of radiation defects in silicon

    Vladislav Pelenitsyn, Pavel Korotaev

    Maqola20223 iqtibos
    ABI

  12. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

    Ioana Pintilie, G. Lindstroem, Alexandra Junkes +1

    Maqola20093 iqtibos
    ABI

  13. Morphology of the Surface of Silicon Doped with Lutetium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1

    Maqola20242 iqtibos
    ABI

  14. Study of Defect Structure of Silicon Doped with Dysprosium Using X-Ray Phase Analysis and Raman Spectroscopy

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +2

    Maqola20242 iqtibos
    ABI

  15. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 iqtibos
    ABI

  16. Recent Progress in Silicon−Based Materials for Performance−Enhanced Lithium−Ion Batteries

    Xiangzhong Kong, Ziyang Xi, Linqing Wang +6

    Sharh maqola20232 iqtibos
    ABI

  17. Scanning Electron Microscopy and X-ray Microanalysis

    Joseph I. Goldstein, Dale E. Newbury, Patrick Echlin +5

    Kitob20032 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI