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GaAs/AlGaAs Mid-Infrared Quantum Cascade Laser with Substrate-Leaking Mode

А. А. ДубиновInstitute for Physics of Microstructures of the Russian Academy of Sciences, 603950, Nizhny Novgorod, RussiaV. I. GavrilenkoInstitute for Physics of Microstructures of the Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

Physics of Wave Phenomenajournal2025en

ABI

Annotatsiya

An original waveguide design for the GaAs/AlGaAs quantum cascade laser with the wavelength of 10 µm and the substrate-leaking mode is proposed. Electromagnetic fields in the proposed waveguide are simulated, and the radiation pattern is calculated in the plane perpendicular to the structure growth plane. Feasibility of this laser with the radiation divergence of less than 4° is shown.

Mavzular

Spectroscopy and Laser Applications Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices

Identifikatorlar

DOI: 10.3103/s1541308x25600370

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