P-I-N PHOTODIODES WITH GETTERS CREATED BY ION IMPLANTATION OF MAIN DOPING IMPURITIES
Annotatsiya
The current-voltage characteristics of p-i-n photodiodes containing getters formed by implantation of boron or antimony ions on the back side of a silicon wafer were investigated. In parallel, control samples that passed all stages of the technological process of device manufacturing except for the implantation of impurities into the non-planar side of the wafer were investigated. It was shown that after the getter formation, the electrophysical parameters of the devices depend significantly on both the type of implanted ions and the modes of subsequent precipitation and diffusion annealing. This is due, on the one hand, to the gettering of technological impurities that create deep generation-recombination centers that determine the magnitude of the reverse dark current of p-i-n photodiodes. On the other hand, processes of defect-impurity interaction between radiation and post-technological defects such as dislocations, microdefects, etc. have a significant effect on the value of the breakdown voltage and the pre-breakdown section of the current-voltage characteristic. The presence of stepped sections on the current-voltage characteristics of p-i-n photodiodes indicates thermal generation of charge carriers from deep energy levels of non-uniformly distributed structural defects and technological impurities in the space charge region of p-i-n photodiodes.