Study of the technology for fabrication and electrical characteristics of SnO2-based heterojunctions on silicon

This paper looks at how to make SnO₂ thin films and how p-SnO₂/n-Si heterojunctions work, especially in optoelectronic devices. We used a high-vacuum thermal evaporation method to put tin oxide layers directly on n-type silicon substrates. Researchers looked at the films' makeup, how well they worked electrically, and how they looked in different types of light. In the current-voltage (I–V) tests, the junctions acted like diodes, letting a lot more current flow in the forward direction than in the reverse direction. In the energy range of 1.75 to 2.0 eV, the photoluminescence (PL) measurements showed different peaks. The results of the infrared absorption test showed that the absorption patterns changed when SnO₂ was on the surface of the silicon. Additionally, increasing Sn content led to a noticeable reduction in surface roughness. The combination of a wide bandgap (3.5 eV for SnO₂) and favourable electrical conductivity indicates that the resulting heterostructures are well-suited for ultraviolet light detection and solar energy conversion. The study also sheds light on the role of Sn-related surface states in recombination processes, potentially influencing the performance of energy-conversion devices. These results demonstrate that p-SnO₂/n-Si heterojunctions possess promising potential for next-generation solar cells, sensors, and optoelectronic systems.

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