Polarization Effects in Si-n-p Radiation Receivers

This paper presents a comprehensive analysis of n-p junction currents and polarization effects in diffusion Si detectors (receivers) for radiation. The mechanisms of polarization induced by charge-carrier capture at localized centers and the formation of space charge in the detector's sensitive region are investigated. The relationship between the presence of "large-scale" traps, which are local clusters of impurity atoms, and the appearance of anomalous spectral characteristics in the form of doublets has been established. It has been experimentally shown that ultrasonic treatment of Si-n-p detectors leads to a significant reduction in polarization effects due to the redistribution of impurity atoms and smoothing of the potential relief in the semiconductor structure. A physical model is proposed to explain the mechanism by which ultrasonic influence affects the electrophysical and spectrometric characteristics of silicon detectors. The results obtained have practical significance for optimizing production technology and improving the operational parameters of Si‑n-p radiation detectors.

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