Effect of poly (3-octylthiophene) to zinc oxide ratios on inclusive charge carrier mobility and optical behaviour of hybrid field effect transistor

Abstract With unique properties, including solution processability, flexibility, lightweight, and moderate charge transport, Poly (3-Octylthiophene) gathers importance in field effect transistors (FETs) applications and plays a huge role in controlling charge transport efficiently in electronic applications. However, it found the challenges on lower charge carrier mobility, moderate UV absorption, and variations in photoluminescence, resulting in reduced optoelectronic behaviour. The research intends to overcome the above challenges and enrich the overall optoelectronic performance of Poly (3-Octylthiophene) (P3OT) configured with zinc oxide (ZnO) in ratios of 90:10, 80:20, 70:30 m and 60:40, respectively, which is made via sol-gel production technique associated with the annealing process. The effect of P3OT: ZnO ratios on charge carrier mobility, threshold voltage, On/Off ratio, and UV absorption, photoluminescence (PL) is investigated. The combinations of P3OT: ZnO showed higher optoelectronic performance, and 60:40 ratios of P3OT: ZnO recorded superior charge carrier mobility of 3.2 × 10 −2 cm 2 /V.s with a threshold voltage of −0.7 V. The On/Off ratio was also improved to 13 × 10 6 with a photoluminescence intensity of 0.3. The ZnO significantly enhances the UV absorption with a 60:40 composition exhibiting a broad absorption peak from 460 to 600 nm. The results underscore the superior mobility and optical performance of P3OT: ZnO (60:40) composition and its potential for FET applications.

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