Investigation of lead-free double perovskite Cs₂CeAgCl₆ for resistive switching and optoelectronic applications
Abdul MajidDepartment of Physics, University of Sahiwal, Sahiwal, 57000, PakistanSalman AhmedDepartment of Physics, University of Sahiwal, Sahiwal, 57000, PakistanNaila MaqboolDepartment of Physics, University of Sahiwal, Sahiwal, 57000, PakistanNoorullah NooriDepartment of Mathematics, Kabul University, Kabul, Afghanistan. [email protected]Mohammad NasirDepartment of Physics, Faculty of Sciences, University of Sialkot, Sialkot, 51040, Punjab, PakistanSana ImtiazDepartment of Physics, Faculty of Sciences, University of Sialkot, Sialkot, 51040, Punjab, PakistanF. F. Al-HarbiDepartment of Physics, College of Science, Princess Nourah bint Abdulrahman University, O. Box 84428, Riyadh, 11671, Saudi ArabiaGafur AbdulakimovSchool of Natural Sciences, National Pedagogical University of Uzbekistan named after Nizami, Tashkent, UzbekistanYounas AhmadState Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P.R. ChinaM. Naziruddin KhanDepartment of Mechanical Engineering, College of Engineering, Prince Mohammad Bin Fahd University, Al-Khobar, Saudi Arabia
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is a promising candidate for resistive switching in resistive random-access memory (RRAM) devices. Additionally, its wide direct bandgap and strong optical response in the ultraviolet region make it suitable for UV photodetectors, optoelectronic switches, and optical sensors. Overall, the material exhibits stable and reproducible switching behavior, making it an excellent choice for non-volatile RRAM applications.
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