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Ish: Conductive filament dynamics in cerium-doped ZnFe₂O₄ thin films for enhanced unipolar resistive switching in RRAM devices
NIH Image to ImageJ: 25 years of image analysis
Caroline A Schneider, Wayne Rasband, Kevin W. Eliceiri
Maqola201224 iqtibosABIMemristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang, Matthew D. Pickett, Xuema Li +3
Maqola20088 iqtibosABIRole of Oxygen Vacancies in Cr‐Doped SrTiO<sub>3</sub> for Resistance‐Change Memory
M. Janousch, G. I. Meijer, U. Staub +3
Maqola20074 iqtibosABIEnhanced stability of filament-type resistive switching by interface engineering
Maqola20173 iqtibosABI