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Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals

Richard D. SchallerLos Alamos National Laboratory Chemistry Division, , MS-J567, Los Alamos, New Mexico 87545Melissa A. PetruskaLos Alamos National Laboratory Chemistry Division, , MS-J567, Los Alamos, New Mexico 87545Victor I. KlimovLos Alamos National Laboratory Chemistry Division, , MS-J567, Los Alamos, New Mexico 87545
2005en
ABI

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Recently, we demonstrated that PbSe nanocrystal quantum dots can efficiently produce multiple electron-hole pairs (excitons) in response to a single absorbed photon. To address the generality of this carrier-multiplication phenomenon to other materials, we perform a comparative study of multiexciton generation in PbSe and CdSe nanocrystals that have distinctly different electronic structures. We find that both materials exhibit high-efficiency carrier multiplication and the activation threshold is lower in CdSe nanocrystals than in PbSe nanocrystals (∼2.5 vs ∼2.9 energy gaps). Furthermore, the efficiencies of multiexciton generation are nearly identical for both materials despite a vast difference in both energy structures and carrier relaxation behaviors, strongly suggesting that this phenomenon is general to quantum-confined semiconductor nanocrystals.

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