Non-Ideal p-n junction Diode of Sb[sub x]Se[sub 1−x] (x = 0.4, 0.5, 0.6, 0.7) Thin Films

We have made diodes consisting of the same alloy i.e. SbxSe1−x (⁠x = 0.4, 0.5, 0.6 and 0.7), but change the concentration of Sb metal from 40% to 70% atomic weight percentage. It is observed from the Hall measurements that the nature of charge carriers have changed from p‐ to n‐type at x = 0.6 for SbxSe1−x. We have measured I‐V characteristics of four p‐n junction diodes i.e. p‐Sb2Se3/n‐Sb3Se2, p‐Sb2Se3/n‐Sb7Se3, p‐SbSe/n‐Sb3Se2, p‐SbSe/n‐Sb7Se3. From the I‐V plots we have calculated the parameters as built‐in voltage (Vbi), forward resistance (Rf), ideal factor (n), saturation current (Io), breakdown current (IBd) and breakdown voltage (VBd).

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