Improving the efficiency of Sb2Se3 thin-film solar cells by post annealing treatment in vacuum condition
Xiaobo HuMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaJiahua TaoMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaShiming ChenMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaJuanjuan XueMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaGuoen WengMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaKaijiangMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaZhigao HuMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaJinchun JiangMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaShaoqiang ChenMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaShaoqiang ChenMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaZ. Q. ZhuMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, ChinaJunhao ChuMoE Key Laboratory of Polar Materials and Devices, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
2018en
ABI
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