Two-dimensional semiconductors with possible high room temperature mobility
Wenxu ZhangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic and Technology of China, Chengdu, 610054, ChinaZhishuo HuangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic and Technology of China, Chengdu, 610054, ChinaWanli ZhangState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic and Technology of China, Chengdu, 610054, ChinaYanrong LiState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic and Technology of China, Chengdu, 610054, China
2014en
ABI
Annotatsiya
We have calculated the longitudinal acoustic phonon limited electron mobility of 14 two-dimensional semiconductors with composition of MX 2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by the deformation potential approximation. We found that out of 14 compounds, MoTe2, HfSe2 and ZrSe2 are promising regarding to their possible high mobility and finite band gap. The phonon limited mobility can be above 2,500 cm2·V−1·s−1 at room temperature.
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