A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
Myoung‐Jae LeeNano Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, KoreaSunae SeoNano Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, KoreaD.‐C. KimDepartment of Computer Systems & Engineering, Ihha Technical College, Incheon 402-753, KoreaSeung‐Eon AhnNano Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, KoreaDavid H. SeoNano Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, KoreaI.‐K. YooNano Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, KoreaIn-Hwan BaekProcess Development Team, Semiconductor R&D Center, Samsung Electronics Company Ltd, Suwon 440-600, KoreaDong‐Sang KimDepartment of Computer Systems & Engineering, Ihha Technical College, Incheon 402-753, KoreaIk-Su ByunDepartment of Physics, Konkuk University, Seoul 143-701, KoreaSeung‐Hyun KimDepartment of Physics, Konkuk University, Seoul 143-701, KoreaI. R. HwangDepartment of Physics, Konkuk University, Seoul 143-701, KoreaJong Sung KimDepartment of Physics, Konkuk University, Seoul 143-701, KoreaSeung-Min JeonDepartment of Physics, Konkuk University, Seoul 143-701, KoreaBae Ho ParkDepartment of Physics, Konkuk University, Seoul 143-701, Korea
2006en
ABI
Annotatsiya
A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high- density, nonvolatile memory devices with 3D stack and cross-point structures.
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