Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
Nuo XuInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaL.F. LiuInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaXianwen SunInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaC ChenInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaY WangInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaDedong HanInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaX Y LiuInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaR.Q. HanInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaJinfeng KangInstitute of Microelectronics, Peking University, Beijing 100871, People's Republic of ChinaBin YuNASA Ames Research Center, Moffat Field, CA 94035, USA
2008en
ABI
Annotatsiya
Highly stable bipolar resistive switching behaviors of TiN/ZnO/Pt devices were demonstrated for the first time. The excellent memory characteristics including fast switching speed (<20 ns for set and <60 ns for reset), long retention (in the order of 105 s) and non-electroforming process were demonstrated. The bipolar switching behaviors can be explained by formation and rupture of the filamentary conductive path consisting of oxygen vacancies. The excellent bipolar switching behavior can be attributed to the significant amount of oxygen vacancies in ZnO film and the effect of TiN layer serving as an oxygen reservoir.
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