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Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

Sungho KimSchool of Electrical Engineering and Computer Science, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaHanul MoonSchool of Electrical Engineering and Computer Science, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaDipti GuptaSchool of Electrical Engineering and Computer Science, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaSeunghyup YooSchool of Electrical Engineering and Computer Science, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South KoreaYang‐Kyu ChoiSchool of Electrical Engineering and Computer Science, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea

2009en

ABI

Annotatsiya

Unipolar resistive switching devices are investigated for nonvolatile memory applications in a metal-insulator-metal structure in which the insulator layer is based on sol-gel-derived zinc oxide (ZnO) films prepared by a simple spin-coating process followed by thermal annealing. Fast programming ( les 50 ns) and a high off-to-on resistance ratio ( ges 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> ) is demonstrated. The influences on the switching behaviors according to the crystallinity of the ZnO films are studied as a function of the annealing temperature. In addition, the devices are fabricated on a flexible plastic substrate and exhibit excellent durability upon repeated bending tests, demonstrating their potential for flexible low-cost memory devices.

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Identifikatorlar

DOI: 10.1109/ted.2009.2012522

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