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Ish: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

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2. 2D MoTe₂ memristors for energy-efficient artificial synapses and neuromorphic applications

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   Sharh maqolaAdvanced Memory and Neural ComputingNanoscale20250 iqtibos

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