Recommended Methods to Study Resistive Switching Devices
Mario LanzaInstitute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 ChinaH.‐S. Philip WongDepartment of Electrical Engineering Stanford University Stanford CA 94305 USAEric PopDepartment of Electrical Engineering Stanford University Stanford CA 94305 USADaniele IelminiDipartimento di Elettronica Informazione e Bioingegneria Politecnico di Milano and IU.NET Piazza L. da Vinci 32 20133 Milano ItalyDimitri StrukovElectrical and Computer Engineering University of California Santa Barbara CA 93106–9560 USAB. C. ReganDepartment of Physics and Astronomy University of California Los Angeles CA 90095 USALuca LarcherDipartimento di Scienze e Metodi dell' Ingegneria Universita degli Studi di Modena e Reggio Emilia Via Amendola 1 42122 Reggio Emilia ItalyMarco A. VillenaDepartment of Electrical Engineering Stanford University Stanford CA 94305 USAJ. Joshua YangDepartment of Electrical and Computer Engineering University of Massachusetts Amherst MA 01003 USALudovic GouxIMEC Kapeldreef 75 B‐3001 Leuven BelgiumAttilio BelmonteIMEC Kapeldreef 75 B‐3001 Leuven BelgiumYuchao YangKey Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 P. R. ChinaFrancesco Maria PuglisiDipartimento di Ingegneria “Enzo Ferrari” Universita degli Studi di Modena e Reggio Emilia Reggio Emilia 41121 ItalyJinfeng KangKey Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 P. R. ChinaBlanka Magyari‐KöpeDepartment of Electrical Engineering Stanford University Stanford CA 94305 USAEilam YalonDepartment of Electrical Engineering Stanford University Stanford CA 94305 USAAnthony J. KenyonDepartment of Electronic & Electrical Engineering UCL Torrington Place London WC1E 7JE UKMark BuckwellDepartment of Electronic & Electrical Engineering UCL Torrington Place London WC1E 7JE UKAdnan MehonićDepartment of Electronic & Electrical Engineering UCL Torrington Place London WC1E 7JE UKAlexander L. ShlugerDepartment of Physics and Astronomy University College London London WC1E 6BT UKHaitong LiDepartment of Electrical Engineering Stanford University Stanford CA 94305 USATuo‐Hung HouDepartment of Electronics Engineering and Institute of Electronics National Chiao Tung University Hsinchu 300 Taiwan Republic of ChinaBoris HudecDepartment of Electronics Engineering and Institute of Electronics National Chiao Tung University Hsinchu 300 Taiwan Republic of ChinaDeji AkinwandeMicroelectronics Research Center The University of Texas at Austin Austin TX 78758 USARuijing GeMicroelectronics Research Center The University of Texas at Austin Austin TX 78758 USAStefano AmbrogioIBM Research‐Almaden 650 Harry Road San Jose CA 95120 USAJ.B. RoldánDepartamento de Electrónica y Tecnología de Computadores Universidad de Granada Facultad de Ciencias Avd. Fuentenueva s/n 18071 Granada SpainE. MirandaDepartament d'Enginyeria Electrònica Universitat Autònoma de Barcelona Barcelona 08193 SpainJ. SuñéDepartament d'Enginyeria Electrònica Universitat Autònoma de Barcelona Barcelona 08193 SpainK. L. PeyEngineering Product Development Pillar Singapore University of Technology and Design Singapore 487372 SingaporeXing WuShanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal University 500 Dongchuan Road Shanghai 200241 ChinaNagarajan RaghavanEngineering Product Development Pillar Singapore University of Technology and Design Singapore 487372 SingaporeErnest Y. WuIBM Research Division 1000 River Road Essex Junction VT 05452‐4299 USAWei LüDepartment of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48109 USAG. NavarroCEA‐LETI Silicon Components Division 17 rue des Martyrs 38054 Grenoble, Cedex 9 FranceWeidong ZhangDepartment of Electronics and Electrical Engineering Liverpool John Moores University Liverpool L3 3AF UKHuaqiang WuInstitute of Microelectronics Tsinghua University Beijing 100084 ChinaRun‐Wei LiKey Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang 315201 ChinaAlexander W. HolleitnerWalter Schottky Institute and Physics Department Technical University of Munich Garching 85748 GermanyUrsula WurstbauerWalter Schottky Institute and Physics Department Technical University of Munich Garching 85748 GermanyMax C. LemmeChair of Electronic Devices RWTH Aachen University 52074 Aachen GermanyMing LiuKey Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 ChinaShibing LongKey Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 ChinaQi LiuKey Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 ChinaHangbing LvKey Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 ChinaAndrea PadovaniMDLab s.r.l. Via Sicilia 31 42122 Reggio Emilia ItalyPaolo PavanDipartimento di Ingegneria “Enzo Ferrari” Universita degli Studi di Modena e Reggio Emilia Reggio Emilia 41121 ItalyIlia ValovInstitut für Werkstoffe der Elektrotechnik 2 RWTH Aachen University 52074 Aachen GermanyXu JingInstitute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 ChinaTingting HanInstitute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 ChinaKaichen ZhuInstitute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 ChinaShaochuan ChenInstitute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 ChinaFei HuiInstitute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 ChinaYuanyuan ShiInstitute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China
2018en
ABI
Annotatsiya
Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.
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