Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications
Naveed ur RehmanDepartment of Physics, University of Lakki Marwat, 28420, Lakki Marwat, KP PakistanNasir IlyasSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P.R. ChinaNourreddine SfinaCollege of Sciences and Arts in Mahayel Asir, Department of Physics, King Khalid University, Abha, Saudi ArabiaMohamed BarhoumiLaboratoire de la Matière Condensée et des Nanosciences (LMCN), Université de Monastir, Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir, TunisiaAlamzeb KhanDepartment of Chemical Sciences, University of Lakki Marwat, 28420, Lakki Marwat, KP PakistanKhaled AlthubeitiDepartment of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi ArabiaSattam Al OtaibiDepartment of Electrical Engineering, Collage of Engineering, Taif University, P.O. Box11099, Taif 21944, Saudi ArabiaShahid IqbalDepartment of Physics, Albion College, Albion, Michigan, 49224, USANasir RahmanDepartment of Physics, University of Lakki Marwat, 28420, Lakki Marwat, KP PakistanMohammad SohailDepartment of Physics, University of Lakki Marwat, 28420, Lakki Marwat, KP PakistanAsad UllahDepartment of Mathematics, University of Lakki Marwat, 28420, Lakki Marwat, KP PakistanTommaso Del RossoDepartment of Physics, Pontifícia Universidade Católica do Rio de Janeiro, Rua Marques de São Vicente, 22451-900, Rio de janeiro, BrazilQuaid ZamanAbid Ali KhanDepartment of Chemical Sciences, University of Lakki Marwat, 28420, Lakki Marwat, KP PakistanSherzod AbdullaevIndependent Researcher of Andijan Machine-Building Institute, Uzbekistan/CEO of the company of “Editory” LLC, UzbekistanAurangzeb KhanDepartment of Chemical Sciences, University of Lakki Marwat, 28420, Lakki Marwat, KP Pakistan
ABI
Annotatsiya
-Si and Au electrodes is used to eliminate the surface effects of the NZO layer, resulting in improved volatile threshold switching performance. Depending on the intensity, duration, and repetition rate of the external stimuli, this newly created memristor exhibits various critical nociceptive functions, including threshold, relaxation, allodynia, and hyperalgesia. The electron trapping/detrapping to/from the traps in the NZO layer is responsible for these nociceptive properties. This kind of NZO-based device produces a multifunctional nociceptor performance that is essential for applications in artificial intelligence systems, such as neural integrated devices with nanometer-sized features.
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