Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
Andrea SplendianiPhysics Department, University of California at Berkeley, Berkeley, California 94720L. SunPhysics Department, University of California at Berkeley, Berkeley, California 94720Yuanbo ZhangPhysics Department, University of California at Berkeley, Berkeley, California 94720Tianshu LiChemistry Department, University of California at Davis, Davis, California 95616Jonghwan KimPhysics Department, University of California at Berkeley, Berkeley, California 94720Chi Yung ChimPhysics Department, University of California at Berkeley, Berkeley, California 94720Giulia GalliChemistry Department, University of California at Davis, Davis, California 95616Feng WangMaterials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
2010en
ABI
Annotatsiya
Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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