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<i>p</i>‐Type Charge Transfer Doping of Graphene Oxide with (NiCo)<sub>1−<i>y</i></sub>Fe<sub><i>y</i></sub>O<sub><i>x</i></sub> for Air‐Stable, All‐Inorganic CsPbIBr<sub>2</sub> Perovskite Solar Cells

Jian DuCollege of Information Science and Technology Jinan University Guangzhou 510632 P. R. ChinaJialong DuanCollege of Information Science and Technology Jinan University Guangzhou 510632 P. R. ChinaXiya YangCollege of Information Science and Technology Jinan University Guangzhou 510632 P. R. ChinaYanyan DuanState Centre for International Cooperation on Designer Low-Carbon and Environmental Material (SCICDLCEM) School of Materials Science and Engineering Zhengzhou University Zhengzhou 450001 P. R. ChinaQuanzhu ZhouBTR New Material Group Co., Ltd. Shenzhen ChinaQunwei TangCollege of Information Science and Technology Jinan University Guangzhou 510632 P. R. China
2021en
ABI

Annotatsiya

Abstract The precise regulation of interfacial charge distribution highly determines the power conversion efficiency of perovskite solar cells (PSCs). Herein, inorganic (NiCo) 1− y Fe y O x nanoparticle decorated graphene oxide (GO) is successfully demonstrated as a hole booster for all‐inorganic CsPbIBr 2 PSC free of precious metal electrode. Arising from the spontaneous electron transfer induced p ‐type doping of GO from edged oxygen‐containing functional groups to (NiCo) 1− y Fe y O x , the best all‐inorganic CsPbIBr 2 PSC achieves an efficiency of 10.95 % under one standard sun owing to the eliminated paradox between charge extraction and charge localization in GO surface. Furthermore, the champion device exhibits an excellent long‐term stability at 10 % relative humidity without encapsulation over 70 days because of the suppressed ions migration.

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DOI
10.1002/anie.202016703

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