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A Design Strategy for Intrinsically Stretchable High-Performance Polymer Semiconductors: Incorporating Conjugated Rigid Fused-Rings with Bulky Side Groups

Deyu LiuDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesJaewan MunDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesGan ChenDepartment of Materials Science and Engineering, Stanford University, Stanford, California 94305, United StatesNathaniel J. SchusterDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesWeichen WangDepartment of Materials Science and Engineering, Stanford University, Stanford, California 94305, United StatesYu ZhengDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesShayla NikzadDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesJian‐Cheng LaiDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesYilei WuDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesDonglai ZhongDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesYangju LinDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesYusheng LeiDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesYuelang ChenDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesSangah GamSamsung Advanced Institute of Technology, Samsung Electronics, Suwon 16678, South KoreaJong Won ChungSamsung Advanced Institute of Technology, Samsung Electronics, Suwon 16678, South KoreaYoungjun YunSamsung Advanced Institute of Technology, Samsung Electronics, Suwon 16678, South KoreaJeffrey B.‐H. TokDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United StatesZhenan BaoDepartment of Chemical Engineering, Stanford University, Stanford, California 94305, United States
2021en
ABI

Annotatsiya

Strategies to improve stretchability of polymer semiconductors, such as introducing flexible conjugation-breakers or adding flexible blocks, usually result in degraded electrical properties. In this work, we propose a concept to address this limitation, by introducing conjugated rigid fused-rings with optimized bulky side groups and maintaining a conjugated polymer backbone. Specifically, we investigated two classes of rigid fused-ring systems, namely, benzene-substituted dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene (Ph-DBTTT) and indacenodithiophene (IDT) systems, and identified molecules displaying optimized electrical and mechanical properties. In the IDT system, the polymer PIDT-3T-OC12-10% showed promising electrical and mechanical properties. In fully stretchable transistors, the polymer PIDT-3T-OC12-10% showed a mobility of 0.27 cm2 V–1 s–1 at 75% strain and maintained its mobility after being subjected to hundreds of stretching–releasing cycles at 25% strain. Our results underscore the intimate correlation between chemical structures, mechanical properties, and charge carrier mobility for polymer semiconductors. Our described molecular design approach will help to expedite the next generation of intrinsically stretchable high-performance polymer semiconductors.

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