Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping
Muhammad Waqas IqbalDepartment of Physics, Riphah International University, 14 Ali Road, Lahore, PakistanAliya AminDepartment of Physics, Riphah International University, 14 Ali Road, Lahore, PakistanMuhammad Arshad KamranDepartment of Physics, College of Science, Majmaah University, P.O. Box no. 1712, Al-Zulfi, 11932, Saudi ArabiaHira AteeqDepartment of Physics, Riphah International University, 14 Ali Road, Lahore, PakistanEhsan ElahiDepartment of Physics, Riphah International University, 14 Ali Road, Lahore, PakistanGhulam HussainDepartment of Physics, Riphah International University, 14 Ali Road, Lahore, PakistanSikander AzamDepartment of Physics, Riphah International University, 14 Ali Road, Lahore, PakistanSikandar AftabDepartment of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul, 05006, South KoreaT. AlharbiDepartment of Physics, College of Science, Majmaah University, P.O. Box no. 1712, Al-Zulfi, 11932, Saudi ArabiaAbdul MajidDepartment of Physics, College of Science, Majmaah University, P.O. Box no. 1712, Al-Zulfi, 11932, Saudi Arabia
2019en
ABI
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