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Effect of Crystal Orientation on Dielectric Properties of Lead Zirconium Titanate Thin Films Prepared by Reactive RF-Sputtering

S. KalpatInternational Center for Actuators and Transducers, Materials Research Laboratory,Xiangwei DuInternational Center for Actuators and Transducers, Materials Research Laboratory,Issac R. AbothuInstitute of Materials Research and Engineering, Kent Ridge, Singapore 119260Akira AkibaOMRON Corporation, Tsukuba, Ibaraki 300-4247, JapanHiroshi GotoOMRON Corporation, Tsukuba, Ibaraki 300-4247, JapanKenji Uchino

2001en

ABI

Annotatsiya

Theoretical calculations based on phenomenology of ferroelectrics have been previously reported for lead zirconium titanate (PZT) system. This paper offers an experimental comparison of the crystal orientation dependence of dielectric properties for PZT thin films grown using reactive RF-sputtering. Highly oriented PZT thin films with a rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The PZT(100) oriented films showed larger dielectric constant and loss compared to PZT(111) films. The PZT(100) films possessed sharp square-like hysteresis loops indicating a instantaneous switching of domains at the coercive field whereas the PZT(111) films showed smooth hysteresis loops as expected from our phenomenological calculations.

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Identifikatorlar

DOI: 10.1143/jjap.40.713

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