Wide-bandgap semiconductor ultraviolet photodetectors
E. MonroyDépt Recherche Fondamentale sur la Matière Condensée, SP2M, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble, FranceF Omn sCentre pour le Recherche sur l'Heteroepitaxie et ses Applications (CNRS), Parc Sophia Antipolis, Rue Bernard Gregory, 06560-Valbonne, FranceF. CalleISOM and Dpto Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
2003en
ABI
Annotatsiya
Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.
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