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Auger scattering dynamic of photo-excited hot carriers in nano-graphite film

Sichao DuCollege of Information Science and Electronic Engineering, Zhejiang University 2 , Hangzhou, Zhejiang 310027, ChinaJuxin YinSchool of Information and Electrical Engineering, Zhejiang University City College 1 , Hangzhou, Zhejiang 310015, ChinaHao XieCollege of Information Science and Electronic Engineering, Zhejiang University 2 , Hangzhou, Zhejiang 310027, ChinaYun‐Lei SunSchool of Information and Electrical Engineering, Zhejiang University City College 1 , Hangzhou, Zhejiang 310015, ChinaTao FangSchool of Information and Electrical Engineering, Zhejiang University City College 1 , Hangzhou, Zhejiang 310015, ChinaYu WangSchool of Information and Electrical Engineering, Zhejiang University City College 1 , Hangzhou, Zhejiang 310015, ChinaJing LiSchool of Information and Electrical Engineering, Zhejiang University City College 1 , Hangzhou, Zhejiang 310015, ChinaDuo XiaoSchool of Information and Electrical Engineering, Zhejiang University City College 1 , Hangzhou, Zhejiang 310015, ChinaXiaoguang YangInstitute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083, ChinaShuo ZhangCollege of Information Science and Electronic Engineering, Zhejiang University 2 , Hangzhou, Zhejiang 310027, ChinaDa‐Wei WangCollege of Information Science and Electronic Engineering, Zhejiang University 2 , Hangzhou, Zhejiang 310027, ChinaWenchao ChenUniversity of Illinois at Urbana-Champaign Institute, Zhejiang University 5 , Haining, Zhejiang 314400, ChinaWen‐Yan YinCollege of Information Science and Electronic Engineering, Zhejiang University 2 , Hangzhou, Zhejiang 310027, ChinaRongkun ZhengSchool of Physics and the Australian Institute for Nanoscale Science and Technology, The University of Sydney 6 , Sydney, NSW 2006, Australia

2022en

ABI

Annotatsiya

Charge carrier scattering channels in graphite bridging its valence and conduction band offer an efficient Auger recombination dynamic to promote low energy charge carriers to higher energy states. It is of importance to answer the question whether a large number of charge carriers can be promoted to higher energy states to enhance the quantum efficiency of photodetectors. Here, we present an experimental demonstration of an effective Auger recombination process in the photo-excited nano-graphite film. The time-resolved hot carrier thermalization was analyzed based on the energy dissipation via the Auger scattering channels. We split the Auger recombination occurrence centered at 0.40 eV energy state into scattering and recombination parts, for characterizing the scattering rate in the conduction band and the recombination rate toward the valence band. The scattering time with respect to the energy state was extracted as 8 ps · eV−1, while the recombination time with respect to the energy state was extracted as 24 ps · eV−1. Our study indicates a 300 fs delay between the hot carrier recombination and generation, leading to a 105 ps−1 · cm−3 Auger scattering efficiency. The observed duration for the Auger recombination to generate hot carriers is prolonged for 1 ps, due to the hot carriers energy relaxation bottleneck with optical-phonons in the nano-graphite. The presented analytic expression gives valuable insights into the Auger recombination dynamic to estimate its most efficient energy regime for mid-infrared photodetection.

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Identifikatorlar

DOI: 10.1063/5.0116720

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