Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
Maqola

Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis

Zhenzhen LinResearch Institute of Photocatalysis, Fujian Provincial Key Laboratory of Photocatalysis-State Key Laboratory Breeding Base, and College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350002, ChinaXinchen WangResearch Institute of Photocatalysis, Fujian Provincial Key Laboratory of Photocatalysis-State Key Laboratory Breeding Base, and College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350002 (China)
2013en
ABI

Annotatsiya

Going flat out: Simultaneous modifications of the textural, surface, and electronic structures of a rigid conjugated carbon nitride polymer has been achieved using direct co-condensation of urea and Ph4BNa. This method gives boron-doped carbon nitride nanosheets (see picture) that optimize the capture of light, improve the charge-separation kinetics, and enhance the surface reactivity for hydrogen photosynthesis.

Hali tarjima qilinmagan

Identifikatorlar

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba