Transistors based on two-dimensional materials for future integrated circuits
Saptarshi DasDepartment of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, USAAmritanand SebastianDepartment of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, USAEric PopDepartment of Electrical Engineering, Stanford University, Stanford, CA, USAConnor J. McClellanDepartment of Electrical Engineering, Stanford University, Stanford, CA, USAAaron D. FranklinDepartment of Chemistry, Duke University, Durham, NC, USATibor GrasserInstitute for Microelectronics, TU Wien, Vienna, AustriaTheresia KnoblochInstitute for Microelectronics, TU Wien, Vienna, AustriaYu. Yu. IllarionovInstitute for Microelectronics, TU Wien, Vienna, AustriaAshish Verma PenumatchaComponent Research, Intel Corporation, Hillsboro, OR, USAJoerg AppenzellerDepartment of Electrical & Computer Engineering, Purdue University, West Lafayette, IN, USAZhihong ChenDepartment of Electrical & Computer Engineering, Purdue University, West Lafayette, IN, USAWenjuan ZhuDepartment of Electrical & Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USAInge Asselberghsimec, Leuven, BelgiumLain‐Jong LiDepartment of Mechanical Engineering, The University of Hong Kong, Hong Kong, Hong KongUygar E. AvciComponent Research, Intel Corporation, Hillsboro, OR, USANavakanta BhatCentre for Nano Science and Engineering, Indian Institute of Science, Bangalore, IndiaThomas D. AnthopoulosKing Abdullah University of Science and Technology (KAUST), KAUST Solar Centre, Thuwal, Saudi ArabiaRajendra SinghDepartment of Physics, Indian Institute of Technology Delhi, New Delhi, India
2021en
ABI
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