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A Bismuth-Halide Double Perovskite with Long Carrier Recombination Lifetime for Photovoltaic Applications

Adam H. SlavneyDepartments of †Chemistry and §Materials Science and Engineering, Stanford University, Stanford, California 94305, United StatesTe HuDepartments of †Chemistry and §Materials Science and Engineering, Stanford University, Stanford, California 94305, United StatesAaron M. LindenbergDepartments of †Chemistry and §Materials Science and Engineering, Stanford University, Stanford, California 94305, United StatesHemamala I. KarunadasaDepartments of †Chemistry and §Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

2016en

ABI

Annotatsiya

Despite the remarkable rise in efficiencies of solar cells containing the lead-halide perovskite absorbers RPbX3 (R = organic cation; X = Br(-) or I(-)), the toxicity of lead remains a concern for the large-scale implementation of this technology. This has spurred the search for lead-free materials with similar optoelectronic properties. Here, we use the double-perovskite structure to incorporate nontoxic Bi(3+) into the perovskite lattice in Cs2AgBiBr6 (1). The solid shows a long room-temperature fundamental photoluminescence (PL) lifetime of ca. 660 ns, which is very encouraging for photovoltaic applications. Comparison between single-crystal and powder PL decay curves of 1 suggests inherently high defect tolerance. The material has an indirect bandgap of 1.95 eV, suited for a tandem solar cell. Furthermore, 1 is significantly more heat and moisture stable compared to (MA)PbI3. The extremely promising optical and physical properties of 1 shown here motivate further exploration of both inorganic and hybrid halide double perovskites for photovoltaics and other optoelectronics.

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Identifikatorlar

DOI: 10.1021/jacs.5b13294

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