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8 ta ish

Ish: Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells

  1. Electron Transport Phenomena in Semiconductors

    B. M. Askerov

    Kitob19944 iqtibos
    ABI
  2. Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wells

    M. J. Yang, P. J. Lin‐Chung, R. J. Wagner +3

    Maqola19933 iqtibos
    ABI
  3. Energy-dependant cyclotron mass in InAs/AlSb quantum wells

    C. Gauer, J. Scriba, A. Wixforth +5

    Maqola19943 iqtibos
    ABI
  4. Enhancement of cyclotron mass in semiconductor quantum wells

    M. J. Yang, P. J. Lin‐Chung, B. V. Shanabrook +3

    Maqola19932 iqtibos
    ABI
  5. Sarlavhasiz

    Boshqa1 iqtibos
    ABI