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Ish: Methods for determining deep defect concentration from dependence of excess carrier density and lifetime on illumination intensity

1. Characterization of deep defects in CdxHg1 xTe by injection-level spectroscopy of carrier lifetime

   V. A. Gnatyuk, Smagul Karazhanov

   Maqola20020 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000408