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Ish: Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures
Influence of the two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells
Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2
MaqolaSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B202312 iqtibosABI