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Development Of A Photoelectric Device for Obtaining an Electrostatic Field Under the Influence of Light Currents

Rayimjonova Odina SodiqovnaFerghana branch of Tashkent University of information technologies named after Mukhammad al-Khwarazmi”,Ferghana,UzbekistanTurgunov Bekzod AbdivositovichFerghana branch of Tashkent University of information technologies named after Mukhammad al-Khwarazmi”,Ferghana,Uzbekistan
2022en
ABI

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This article is devoted to the study of the possibility of using the phenomenon of photoelectret in semiconductor materials to create an electrostatic field under the action of light. In this paper, we propose a new three-layer structure to achieve the photoelectret effect. A solution for obtaining an abnormal photovoltage using an APV element in a photoelectric device is also described. In addition, the design of a device for recording the state of photoelectrets in semiconductor materials is also proposed.

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