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Interconnected Silicon Hollow Nanospheres for Lithium-Ion Battery Anodes with Long Cycle Life

Yan YaoDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United StatesMatthew T. McDowellDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United StatesIll RyuDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United StatesHui WuDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United StatesNian LiuDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United StatesLiangbing HuDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United StatesWilliam D. NixDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United StatesYi CuiDepartment of Materials Science and Engineering and ‡Department of Chemistry, Stanford University, Stanford, California 94305, United States
2011en
ABI

Annotatsiya

Silicon is a promising candidate for the anode material in lithium-ion batteries due to its high theoretical specific capacity. However, volume changes during cycling cause pulverization and capacity fade, and improving cycle life is a major research challenge. Here, we report a novel interconnected Si hollow nanosphere electrode that is capable of accommodating large volume changes without pulverization during cycling. We achieved the high initial discharge capacity of 2725 mAh g(-1) with less than 8% capacity degradation every hundred cycles for 700 total cycles. Si hollow sphere electrodes also show a Coulombic efficiency of 99.5% in later cycles. Superior rate capability is demonstrated and attributed to fast lithium diffusion in the interconnected Si hollow structure.

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