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Room-Temperature Ultraviolet Nanowire Nanolasers

Michael H. HuangDepartment of Chemistry, University of California,Samuel S. MaoH. FeickMaterials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAHaoquan YanDepartment of Chemistry, University of California,Yiying WuDepartment of Chemistry, University of California,Hannes KindDepartment of Chemistry, University of California,Eicke R. WeberMaterials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USARichard E. RussoPeidong YangDepartment of Chemistry, University of California,

2001en

ABI

Annotatsiya

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.

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DOI: 10.1126/science.1060367

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