Lead zirconate titanate thick film with enhanced electrical properties for high frequency transducer applications
Benpeng ZhuUniversity of Southern California 1 NIH Transducer Resource Center and Department of Biomedical Engineering, , Los Angeles, California 90089-1111, USADawei WuUniversity of Southern California 1 NIH Transducer Resource Center and Department of Biomedical Engineering, , Los Angeles, California 90089-1111, USAQifa ZhouUniversity of Southern California 1 NIH Transducer Resource Center and Department of Biomedical Engineering, , Los Angeles, California 90089-1111, USAJiao ShiWuhan University 2 Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, , Wuhan 430072, ChinaK. K. ShungUniversity of Southern California 1 NIH Transducer Resource Center and Department of Biomedical Engineering, , Los Angeles, California 90089-1111, USA
2008en
ABI
Annotatsiya
Piezoelectric Pb(Zr0.52Ti0.48)O3 thick film with the thickness around 10μm has been deposited on the (111) Pt∕Ti∕SiO2∕Si substrate using a ceramic powder/sol-gel solution modified composite method. X-ray diffraction analysis and scanning electron microscopy revealed that the film was in the well-crystallized perovskite phase and crack-free. At 1kHz, the dielectric constant and the loss were 1925 and 0.015, respectively. The remnant polarization was 42.0μC∕cm2 at room temperature. A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at −6dB of 50% at 156MHz.
Hali tarjima qilinmagan
Identifikatorlar
Iqtiboslar va manbalar
6 ta iqtibos0 ta foydalanilgan manba