Optical and Electronic Properties of Two‐Dimensional Layered Materials
Marco BernardiDepartment of Applied Physics and Materials Science Steele Laboratory California Institute of Technology Pasadena CA 91125 USACan AtacaDepartment of Materials Science Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USAMaurizia PalummoDepartment of Materials Science Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USAJeffrey C. GrossmanDepartment of Materials Science Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USA
2016en
ABI
Annotatsiya
Modern semiconductor devices have revolutionized wide-ranging technologies such as electronics, lighting, solar \nenergy, and communication [1]. The semiconductor industry \nemploys Si to fabricate electronic circuits, and GaAs, \nGaN, and other III–V materials for optoelectronics [2], with \ntypical substrates consisting of wafers manufactured at \nhigh temperature. Precisely controlled thin films can be \ndeposited on the substrate to achieve additional functionality, for example by chemical vapor deposition (CVD) or molecular beam epitaxy [3].
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